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参数资料
| 型号： | APTC60DDAM70T3 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Dual boost chopper Super Junction MOSFET Power Module |
| 中文描述： | 双升压斩波器超结MOSFET的功率模块 |
| 文件页数： | 5/6页 |
| 文件大小： | 346K |
| 代理商： | APTC60DDAM70T3 |
APTC60DDAM70T3
A
APT website – http://www.advancedpower.com
5 - 6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25
50
75 100 125 150
T
J
, Junction Temperature (°C)
Breakdown Voltage vs Temperature
B
D
,
V
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25
T
J
, Junction Temperature (°C)
0
25 50 75 100 125 150
R
D
(
(
V
GS
=10V
I
D
= 39A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25
50
75 100 125 150
T
C
, Case Temperature (°C)
V
G
(
(
Maximum Safe Operating Area
DC line
10 ms
1 ms
100 μs
0.1
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
limited by R
DS
on
Single pulse
T
J
=150°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
Capacitance vs Drain to Source Voltage
V
DS
=120V
V
DS
=300V
V
DS
=480V
0
2
4
6
8
10
12
14
0
50
100
Gate Charge (nC)
150
200
250
300
V
G
,
Gate Charge vs Gate to Source Voltage
I
D
=39A
T
J
=25°C
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