- 您现在的位置：买卖IC网 > PDF目录57949 > APTC60DHM35T3G (MICROSEMI POWER PRODUCTS GROUP) 72 A, 600 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APTC60DHM35T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 72 A, 600 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 237K |
| 代理商： | APTC60DHM35T3G |
APTC60DHM35T3G
APT
C
60DHM
35T3G
–
Rev
0
Au
gust,
2009
www.microsemi.com
2- 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 600V
Tj = 25°C
40
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
375
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 72A
35
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5.4mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
14
Coss
Output Capacitance
5.13
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.42
nF
Qg
Total gate Charge
518
Qgs
Gate – Source Charge
58
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 72A
222
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
283
Tf
Fall Time
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 72A
RG = 2.5Ω
84
ns
Eon
Turn-on Switching Energy
1340
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 72A, RG = 2.5
1960
J
Eon
Turn-on Switching Energy
2192
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 72A, RG = 2.5
2412
J
Diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
25
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
60
A
IF = 60A
1.7
2.3
IF = 120A
Tj = 25°C
2
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.4
V
Tj = 25°C
70
trr
Reverse Recovery Time
Tj = 125°C
140
ns
Tj = 25°C
100
Qrr
Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt =200A/s
Tj = 125°C
690
nC
相关PDF资料 |
PDF描述 |
|---|---|
| APTC60DSKM45CT1G | 49 A, 600 V, 0.045 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60HM45SCTG | 49 A, 600 V, 0.045 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60HM70SCTG | 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60HM70T1G | 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60SKM35T1G | 72 A, 600 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC60DHM45T1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Asymmetrical bridge Super Junction MOSFET Power Module |
| APTC60DSKM24T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP3 制造商:Microsemi Corporation 功能描述:600V 24mOhm Super Junction MOSFET Power Module |
| APTC60DSKM35T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual buck chopper Super Junction MOSFET Power Module |
| APTC60DSKM35T3G | 功能描述:MOSFET MOD DUAL BUCK CHOPPER SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC60DSKM45CT1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V 49A SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
发布紧急采购，3分钟左右您将得到回复。