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参数资料
| 型号： | APTC60DHM35T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 72 A, 600 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 7/7页 |
| 文件大小： | 237K |
| 代理商： | APTC60DHM35T3G |
APTC60DHM35T3G
APT
C
60DHM
35T3G
–
Rev
0
Au
gust,
2009
www.microsemi.com
7- 7
Typical diode Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Th
e
rm
a
lI
m
pedan
c
e
(°C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=125°C
0
40
80
120
160
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VF, Anode to Cathode Voltage (V)
I F
,F
o
rward
C
u
rrent
(A)
Forward Current vs Forward Voltage
IRRM vs. Current Rate of Charge
30 A
60 A
120 A
0
5
10
15
20
25
30
35
40
0
200
400
600
800 1000 1200
-diF/dt (A/s)
I RRM
,Revers
e
Recovery
C
u
rrent
(A)
TJ=125°C
VR=400V
Trr vs. Current Rate of Charge
30 A
60 A
120 A
50
75
100
125
150
175
0
200
400
600
800 1000 1200
-diF/dt (A/s)
t rr
,Reverse
R
e
c
o
ve
ry
Ti
m
e
(ns)
TJ=125°C
VR=400V
QRR vs. Current Rate Charge
30 A
60 A
120 A
0.0
0.5
1.0
1.5
2.0
0
200
400
600
800
1000 1200
-diF/dt (A/s)
Q
RR
,Rev
e
rse
Recovery
Charge
(
C)
TJ=125°C
VR=400V
Capacitance vs. Reverse Voltage
0
100
200
300
400
500
1
10
100
1000
VR, Reverse Voltage (V)
C,
C
a
pacitance
(pF)
0
20
40
60
80
100
25
50
75
100
125
150
175
Case Temperature (°C)
I F
(A)
DC Forward Current vs. Case Temp.
Duty Cycle = 0.5
TJ=175°C
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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| APTC60HM70SCTG | 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60HM70T1G | 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60SKM35T1G | 72 A, 600 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC60DHM45T1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Asymmetrical bridge Super Junction MOSFET Power Module |
| APTC60DSKM24T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP3 制造商:Microsemi Corporation 功能描述:600V 24mOhm Super Junction MOSFET Power Module |
| APTC60DSKM35T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual buck chopper Super Junction MOSFET Power Module |
| APTC60DSKM35T3G | 功能描述:MOSFET MOD DUAL BUCK CHOPPER SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC60DSKM45CT1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V 49A SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
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