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参数资料
| 型号： | APTC60DHM45T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 49 A, 600 V, 0.045 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 251K |
| 代理商： | APTC60DHM45T1G |
APTC60DHM45T1G
APT
C
60DHM
45T1G
–
Rev
0
Au
gust,
2009
www.microsemi.com
5 – 7
0.8
0.9
1.0
1.1
1.2
25
50
75
100
125
150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S
,Drai
n
to
S
o
u
rce
B
reakd
o
w
n
V
o
lt
ag
e
(
N
o
rm
a
li
z
ed
)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
DS
(o
n
),
Drai
n
to
So
u
rce
ON
resi
stance
(N
or
m
a
lize
d
)
VGS=10V
ID= 50A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
25
50
75
100
125
150
TC, Case Temperature (°C)
V
GS
(T
H
),
Thre
s
hold
Vo
lt
a
g
e
(N
or
m
a
lize
d
)
Maximum Safe Operating Area
10 ms
1 ms
100 s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(
A
)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
1020
3040
50
VDS, Drain to Source Voltage (V)
C
,C
a
pa
c
it
a
nc
e
(
pF)
Capacitance vs Drain to Source Voltage
VDS=120V
VDS=300V
VDS=480V
0
2
4
6
8
10
12
0
20 40 60 80 100 120 140 160
Gate Charge (nC)
V
GS
,Gate
to
So
u
rce
V
o
lt
ag
e
(V
)
Gate Charge vs Gate to Source Voltage
ID=50A
TJ=25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC60DSKM24T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP3 制造商:Microsemi Corporation 功能描述:600V 24mOhm Super Junction MOSFET Power Module |
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| APTC60DSKM45CT1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V 49A SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTC60DSKM45T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
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