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参数资料
| 型号： | APTC60DHM45T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 49 A, 600 V, 0.045 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 6/7页 |
| 文件大小： | 251K |
| 代理商： | APTC60DHM45T1G |
APTC60DHM45T1G
APT
C
60DHM
45T1G
–
Rev
0
Au
gust,
2009
www.microsemi.com
6 – 7
TJ=25°C
TJ=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
I DR
,Reverse
Drai
n
Curren
t(A)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
0
10 20 304050 60 7080
ID, Drain Current (A)
t d(
on)
a
nd
t
d(
of
f)
(ns)
VDS=400V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
60
70
0
1020
30
40
5060
7080
ID, Drain Current (A)
t r
and
t
f(n
s)
VDS=400V
RG=5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.4
0.8
1.2
1.6
2
0
10 2030 4050 60 70 80
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
erg
y
(
m
J)
VDS=400V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0
0.5
1
1.5
2
2.5
0
1020
3040
50
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
erg
y
(m
J)
Switching Energy vs Gate Resistance
VDS=400V
ID=50A
TJ=125°C
L=100H
hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
5
1015 202530 35 4045 50
ID, Drain Current (A)
F
req
uen
cy
(kH
z
)
Operating Frequency vs Drain Current
VDS=400V
D=50%
RG=5
TJ=125°C
TC=75°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
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| APTC60DSKM45T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
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