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参数资料
| 型号： | APTC60HM70SCTG |
| 厂商： | MICROSEMI CORP |
| 元件分类： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP4, 14 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 318K |
| 代理商： | APTC60HM70SCTG |
APTC60HM70SCTG
A
P
T
C
60
H
M
70S
C
T
G
–
R
ev
3
J
ul
y,
2006
www.microsemi.com
3 – 8
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
100
400
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 175°C
200
2000
A
IF
DC Forward Current
Tc = 125°C
20
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 20A
Tj = 175°C
2.0
2.4
V
QC
Total Capacitive Charge
IF = 20A, VR = 300V
di/dt =800A/s
28
nC
f = 1MHz, VR = 200V
130
C
Total Capacitance
f = 1MHz, VR = 400V
100
pF
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.5
Series diode
1.2
RthJC
Junction to Case Thermal Resistance
Parallel diode
1.5
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To Heatsink
M5
2.5
4.7
N.m
Wt
Package Weight
160
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
50
k
B 25/85
T25 = 298.15 K
3952
K
=
T
B
R
T
1
exp
25
85
/
25
T: Thermistor temperature
RT: Thermistor value at T
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相关代理商/技术参数 |
参数描述 |
|---|---|
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