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参数资料
| 型号： | APTC60HM70SCTG |
| 厂商： | MICROSEMI CORP |
| 元件分类： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP4, 14 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 318K |
| 代理商： | APTC60HM70SCTG |
APTC60HM70SCTG
A
P
T
C
60
H
M
70S
C
T
G
–
R
ev
3
J
ul
y,
2006
www.microsemi.com
6 – 8
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S,
D
rai
n
t
o
S
o
u
rce
B
reakd
o
w
n
V
o
lt
ag
e
(
N
o
rm
a
li
ze
d
)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0
25 50 75 100 125 150
T
J, Junction Temperature (°C)
R
DS
(o
n
),
D
ra
in
t
o
S
o
u
rce
O
N
resi
st
an
ce
(N
or
m
a
li
ze
d)
VGS=10V
ID= 39A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
Thr
e
s
h
o
ld
V
o
lt
a
g
e
(N
or
m
a
li
ze
d)
Maximum Safe Operating Area
10 ms
1 ms
100s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,D
ra
in
C
u
rr
e
nt
(
A
)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
102030
4050
VDS, Drain to Source Voltage (V)
C
,C
a
p
aci
ta
n
ce
(
p
F
)
Capacitance vs Drain to Source Voltage
VDS=120V
VDS=300V
VDS=480V
0
2
4
6
8
10
12
14
0
50
100
150
200
250
300
Gate Charge (nC)
V
GS
,G
a
te
t
o
S
o
u
rce
V
o
lt
ag
e
(V
)
Gate Charge vs Gate to Source Voltage
ID=39A
TJ=25°C
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相关代理商/技术参数 |
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|---|---|
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