参数资料
型号: APTC80A15SCT
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 28 A, 800 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
文件页数: 2/7页
文件大小: 317K
代理商: APTC80A15SCT
APTC80A15SCT
A
PT
C
80A
15S
C
T
R
ev
01
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 500A
800
V
VGS = 0V,VDS = 800V
Tj = 25°C
50
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 14A
150
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4507
Coss
Output Capacitance
2092
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
108
pF
Qg
Total gate Charge
182
Qgs
Gate – Source Charge
24
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 28A
92
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
13
Td(off)
Turn-off Delay Time
83
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 533V
ID = 28A
RG = 2.5
W
35
ns
Eon
Turn-on Switching Energy
292
Eoff
Turn-off Switching Energy
u
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5
278
J
Eon
Turn-on Switching Energy
510
Eoff
Turn-off Switching Energy
u
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5
342
J
u In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
30
A
IF = 30A
1.1
1.15
IF = 60A
1.4
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
0.9
V
Tj = 25°C
24
trr
Reverse Recovery Time
IF = 30A
VR = 133V
di/dt = 200A/s
Tj = 125°C
48
ns
Tj = 25°C
33
Qrr
Reverse Recovery Charge
IF = 30A
VR = 133V
di/dt = 200A/s
Tj = 125°C
150
nC
相关PDF资料
PDF描述
APTC80AM75SC 58 A, 800 V, 0.075 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC80AM75SC 58 A, 800 V, 0.075 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC80DDA15T3 28 A, 800 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC80DDA15T3 28 A, 800 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC80DSK29T3 15 A, 800 V, 0.29 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
APTC80A15SCTG 功能描述:MOSFET PWR MOD PHASE LEG SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:*
APTC80A15T1G 功能描述:MOSFET PWR MOD PHASE LEG SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:*
APTC80AM75SC 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
APTC80AM75SCG 功能描述:MOSFET PWR MOD PHASE LEG SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:*
APTC80DA15T1G 功能描述:MOSFET N-CH 800V 28A SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:*