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参数资料
| 型号： | APTC80AM75SC |
| 元件分类： | JFETs |
| 英文描述： | 58 A, 800 V, 0.075 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/7页 |
| 文件大小： | 306K |
| 代理商： | APTC80AM75SC |
APTC80AM75SC
A
PT
C
80A
M
75S
C
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
1 – 7
OUT
VBUS
S1
G1
0/VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
800
V
Tc = 25°C
56
ID
Continuous Drain Current
Tc = 80°C
43
IDM
Pulsed Drain current
232
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
75
m
W
PD
Maximum Power Dissipation
Tc = 25°C
568
W
IAR
Avalanche current (repetitive and non repetitive)
24
A
EAR
Repetitive Avalanche Energy
0.5
EAS
Single Pulse Avalanche Energy
670
mJ
VDSS = 800V
RDSon = 75m
W max @ Tj = 25°C
ID = 56A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
Parallel SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Phase leg
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
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| APTC80AM75SC | 58 A, 800 V, 0.075 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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