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参数资料
| 型号： | APTC80DA15T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 28 A, 800 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 313K |
| 代理商： | APTC80DA15T1G |
APTC80DA15T1G
APT
C
80DA
15T1G
–
Re
v0
A
ugus
t,2007
www.microsemi.com
5 – 6
0.90
0.95
1.00
1.05
1.10
1.15
25
50
75
100
125
150
TJ, Junction Temperature (°C)
BV
DS
S,
Drai
n
to
So
ur
ce
Breakdo
w
n
Volt
ag
e
(N
o
rma
lize
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
DS
(o
n),
Drai
n
t
o
So
u
rce
ON
resi
st
an
ce
(N
or
ma
lize
d
)
VGS=10V
ID= 14A
Threshold Voltage vs Temperature
0.7
0.8
0.9
1.0
1.1
25
50
75
100
125
150
TC, Case Temperature (°C)
V
GS
(T
H
),
Thr
es
h
old
V
o
lt
ag
e
(N
or
ma
lize
d
)
Maximum Safe Operating Area
100ms
1ms
100s
0
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Dr
ai
n
Cu
rr
ent
(A)
limited by
RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
010
20
30
40
50
VDS, Drain to Source Voltage (V)
C,
Cap
aci
tan
ce
(p
F)
Capacitance vs Drain to Source Voltage
VDS=160V
VDS=400V
VDS=640V
0
2
4
6
8
10
12
14
16
0
40
80
120
160
200
Gate Charge (nC)
Gate Charge vs Gate to Source Voltage
V
GS
,G
at
et
o
Sou
rc
eVo
lt
ag
e(
V
)
ID=28A
TJ=25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
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