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参数资料
| 型号： | APTC80H29T3 |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 800 V, 0.29 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-25 |
| 文件页数： | 2/6页 |
| 文件大小： | 335K |
| 代理商： | APTC80H29T3 |
APTC80H29T3
A
P
T
C
80
H
29T
3
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0
S
ept
em
be
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2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
800
V
VGS = 0V,VDS = 800V
Tj = 25°C
25
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V
Tj = 125°C
250
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 7.5A
290
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
2254
Coss
Output Capacitance
1046
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
54
pF
Qg
Total gate Charge
90
Qgs
Gate – Source Charge
11
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 15A
45
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
13
Td(off)
Turn-off Delay Time
83
Tf
Fall Time
Inductive switching @125°C
VGS = 15V
VBus = 533V
ID = 15A
RG = 5
35
ns
Eon
Turn-on Switching Energy
243
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 15A, RG = 5
139
J
Eon
Turn-on Switching Energy
425
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 15A, RG = 5
171
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
15
IS
Continuous Source current
(Body diode)
Tc = 80°C
11
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 15A
1.2
V
dv/dt
Peak Diode Recovery
6
V/ns
trr
Reverse Recovery Time
Tj = 25°C
550
ns
Qrr
Reverse Recovery Charge
IS = - 15A
VR = 400V
diS/dt = 100A/s
Tj = 25°C
15
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 15A
di/dt
≤ 100A/s
VR ≤ VDSS
Tj ≤ 150°C
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