参数资料
型号: APTC90DSK12CT1G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 30 A, 900 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SP1, 12 PIN
文件页数: 4/6页
文件大小: 221K
代理商: APTC90DSK12CT1G
APTC90DSK12CT1G
APT
C
90DSK12CT
1G
Rev
0
Septem
ber
,2009
www.microsemi.com
4 – 6
Typical CoolMOS Performance Curve
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
10
12.5
15
17.5
20
22.5
25
ID, Drain Current (A)
Freque
ncy
(
k
Hz
)
Operating Frequency vs Drain Current
VDS=600V
D=50%
RG=7.5
TJ=125°C
TC=75°C
Switching Energy vs Current
Eon
Eoff
0
1
2
5
1015
2025
3035
40
ID, Drain Current (A)
Eo
n
a
n
d
Eo
ff
(
m
J
)
VDS=600V
RG=7.5
TJ=125°C
L=100H
ON resistance vs Temperature
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
DS
(on)
,Dr
ai
n
to
So
ur
ce
ON
resi
stance
(N
or
ma
lized
)
Switching Energy vs Gate Resistance
Eon
Eoff
0
1
2
3
5
10
152025
3035
Gate Resistance (Ohms)
S
w
it
chi
n
g
E
n
er
gy
(m
J)
VDS=600V
ID=26A
TJ=125°C
L=100H
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