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参数资料
| 型号： | APTC90HM60T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 59 A, 900 V, 0.06 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 192K |
| 代理商： | APTC90HM60T3G |
APTC90HM60T3G
APT
C
90HM
60T
3G
–
Rev
2
August,
2009
www.microsemi.com
4 – 5
Typical CoolMOS Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
rm
a
lI
m
pedanc
e
(°
C/
W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
6V
0
80
160
240
0
5
10
15
20
VDS, Drain to Source Voltage (V)
I D
,
Dra
in
C
u
rr
en
t(A
)
Low Voltage Output Characteristics
VGS=20, 8V
0
10
20
30
40
50
60
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
Dra
in
Current
(
A
)
DC Drain Current vs Case Temperature
900
925
950
975
1000
25
50
75
100
125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S
,Drai
n
to
So
urce
Brea
k
d
own
Volt
age
Maximum Safe Operating Area
10 ms
100 s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Dr
ai
n
Cu
rr
e
n
t(
A
)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
1
10
100
1000
10000
100000
0
25 50 75 100 125 150 175 200
VDS, Drain to Source Voltage (V)
C
,C
a
pa
c
it
a
nc
e
(
p
F)
Capacitance vs Drain to Source Voltage
0
2
4
6
8
10
0
100
200
300
400
500
600
Gate Charge (nC)
V
GS
,G
a
te
to
S
o
u
rc
e
Vo
lta
g
e
(
V
)
Gate Charge vs Gate to Source Voltage
VDS=400V
ID=52A
TJ=25°C
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