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参数资料
| 型号： | APTGF10X120E2 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 15 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-17 |
| 文件页数： | 2/4页 |
| 文件大小： | 244K |
| 代理商： | APTGF10X120E2 |
APTGF10X120E2
APTGF10X120P2
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PT
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APT website – http://www.advancedpower.com
2 - 4
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500A
1200
V
Tj = 25°C
200
400
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
800
A
Tj = 25°C
2.7
3.2
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 10A
Tj = 125°C
3.3
3.9
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 0.35 mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
120
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
600
Coes
Output Capacitance
60
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
38
pF
Td(on)
Turn-on Delay Time
55
110
Tr
Rise Time
50
100
Td(off)
Turn-off Delay Time
380
570
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 10A
RG = 150
80
120
ns
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
2.9
3.4
VF
Diode Forward Voltage
IF = 10A
VGE = 0V
Tj = 125°C
2.6
V
trr
Reverse Recovery Time
IF = 10A
VR = 600V
di/dt =400A/s
Tj = 125°C
0.5
s
Tj = 25°C
0.4
Qrr
Reverse Recovery Charge
IF = 10A
VR = 600V
di/dt =400A/s Tj = 125°C
1.2
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
1.55
RthJC
Junction to Case
Diode
2
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
2
3.5
N.m
Wt
Package Weight
185
g
相关PDF资料 |
PDF描述 |
|---|---|
| APTGF10X120E2G | 15 A, 1200 V, N-CHANNEL IGBT |
| APTGF125X60E3 | 180 A, 600 V, N-CHANNEL IGBT |
| APTGF125X60E3G | 180 A, 600 V, N-CHANNEL IGBT |
| APTGF125X60E3 | 180 A, 600 V, N-CHANNEL IGBT |
| APTGF125X60TE3 | 180 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF10X120E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF10X120P2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF10X120P2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF10X60BTP2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF10X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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