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参数资料
| 型号： | APTGF125X60E3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 180 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-33 |
| 文件页数： | 2/3页 |
| 文件大小： | 210K |
| 代理商： | APTGF125X60E3G |
APTGF125X60E3
A
PT
G
F1
25
X
60
E3
–
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500A
600
V
Tj = 25°C
1
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
1
mA
Tj = 25°C
1.7
2.0
2.45
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 150A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 3 mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
450
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
6500
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
600
pF
Td(on)
Turn-on Delay Time
115
Tr
Rise Time
28
Td(off)
Turn-off Delay Time
200
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 150A
RG = 1.5
25
ns
Td(on)
Turn-on Delay Time
125
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
225
Tf
Fall Time
35
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 150A
RG = 1.5
4.6
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
1.25
1.6
VF
Diode Forward Voltage
IF = 150A
VGE = 0V
Tj = 125°C
1.2
V
Er
Reverse Recovery Energy
IF = 150A
VR = 300V
di/dt =800A/s
Tj = 125°C
4.7
mJ
Tj = 25°C
10
Qrr
Reverse Recovery Charge
IF = 150A
VR = 300V
di/dt =800A/s Tj = 125°C
18
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.22
RthJC
Junction to Case
Diode
0.44
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To heatsink
M5
3
4.5
N.m
Wt
Package Weight
300
g
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| APTGF125X60E3 | 180 A, 600 V, N-CHANNEL IGBT |
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| APTGF125X60TE3 | 180 A, 600 V, N-CHANNEL IGBT |
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相关代理商/技术参数 |
参数描述 |
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| APTGF125X60TE3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF125X60TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF150A120DG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF150A120G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF150A120T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg NPT IGBT Power Module |
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