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参数资料
| 型号： | APTGF150X60TE3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 225 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, E3, 35 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 296K |
| 代理商： | APTGF150X60TE3G |
APTGF150X60TE3G
A
P
T
G
F
150
X
60T
E
3G
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R
ev
2
A
pr
il,
2006
APT website – http://www.advancedpower.com
2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
500
A
Tj = 25°C
1.7
2.0
2.5
VCE(sat)
Collector Emitter saturation Voltage
VGE =15V
IC = 200A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 4 mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
9000
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
800
pF
Td(on)
Turn-on Delay Time
163
Tr
Rise Time
43
Td(off)
Turn-off Delay Time
253
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 1.5
33
ns
Td(on)
Turn-on Delay Time
180
Tr
Rise Time
49
Td(off)
Turn-off Delay Time
285
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 1.5
41
ns
Eon
Turn on Energy
Tj = 125°C
3.7
Eoff
Turn off Energy
VGE = ±15V
VBus = 300V
IC = 200A
RG = 1.5
Tj = 125°C
6.3
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
150
A
Tj = 25°C
1.25
1.6
VF
Diode Forward Voltage
IF = 150A
VGE = 0V
Tj = 125°C
1.2
V
Er
Reverse Recovery Energy
Tj = 125°C
4
mJ
Tj = 25°C
150
trr
Reverse Recovery Time
Tj = 125°C
250
ns
Tj = 25°C
11
Qrr
Reverse Recovery Charge
IF = 150A
VR = 300V
di/dt =5600A/s
Tj = 125°C
17
C
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