参数资料
型号: APTGF180A60T
元件分类: IGBT 晶体管
英文描述: 220 A, 600 V, N-CHANNEL IGBT
封装: MODULE-12
文件页数: 2/6页
文件大小: 302K
代理商: APTGF180A60T
APTGF180A60T
A
PT
G
F180A
60T
R
ev
1
M
ar
ch,
2004
APT website – http://www.advancedpower.com
2- 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 150A
600
V
Tj = 25°C
150
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
3000
A
Tj = 25°C
2.0
2.5
VCE(on)
Collector Emitter on Voltage
VGE =15V
IC = 180A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 2mA
3
5
V
IGES
Gate – Emitter Leakage Current
VGE = ±20 V, VCE = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
8.6
Coes
Output Capacitance
0.94
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
0.8
nF
Qg
Total gate Charge
660
Qge
Gate – Emitter Charge
580
Qgc
Gate – Collector Charge
VGS = 15V
VBus = 300V
IC = 180A
400
nC
Td(on)
Turn-on Delay Time
26
Tr
Rise Time
25
Td(off)
Turn-off Delay Time
150
Tf
Fall Time
30
ns
Eon
Turn-on Switching Energy
u
6.74
Eoff
Turn-off Switching Energy
v
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 180A
RG = 2.5
W
5.74
mJ
Td(on)
Turn-on Delay Time
26
Tr
Rise Time
25
Td(off)
Turn-off Delay Time
170
Tf
Fall Time
40
ns
Eon
Turn-on Switching Energy
u
8.6
Eoff
Turn-off Switching Energy
v
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 180A
RG = 2.5
W
7
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
120
A
IF = 120A
1.6
1.8
IF = 240A
1.9
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
1.4
V
Tj = 25°C
85
trr
Reverse Recovery Time
IF = 120A
VR = 400V
di/dt =800A/s
Tj = 125°C
160
ns
Tj = 25°C
520
Qrr
Reverse Recovery Charge
IF = 120A
VR = 400V
di/dt =800A/s
Tj = 125°C
2800
nC
u Eon includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1
相关PDF资料
PDF描述
APTGF180DA60TG 220 A, 600 V, N-CHANNEL IGBT
APTGF180DU60TG 220 A, 600 V, N-CHANNEL IGBT
APTGF180H60G 220 A, 600 V, N-CHANNEL IGBT
APTGF200A120D3G 300 A, 1200 V, N-CHANNEL IGBT
APTGF200U60D4 250 A, 600 V, N-CHANNEL IGBT
相关代理商/技术参数
参数描述
APTGF180A60TG 功能描述:IGBT MODULE NPT PHASE LEG SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGF180DA60D3G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF180DA60TG 功能描述:IGBT 600V 220A 833W SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGF180DH60G 功能描述:POWER MODULE IGBT 600V 180A SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGF180DU60T 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual common source NPT IGBT Power Module