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参数资料
| 型号： | APTGF200U60D4 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 250 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-4 |
| 文件页数： | 2/5页 |
| 文件大小： | 263K |
| 代理商： | APTGF200U60D4 |
APTGF200U60D4
A
P
T
G
F
200
U
60D
4–
R
ev
1
J
une
,2005
APT website – http://www.advancedpower.com
2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
1
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
1
mA
Tj = 25°C
1.95
2.45
VCE(on)
Collector Emitter on Voltage
VGE = 15V
IC = 200A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 4mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
9
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
0.8
nF
Td(on)
Turn-on Delay Time
163
Tr
Rise Time
43
Td(off)
Turn-off Delay Time
253
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 1.5
33
ns
Td(on)
Turn-on Delay Time
183
Tr
Rise Time
49
Td(off)
Turn-off Delay Time
285
Tf
Fall Time
41
ns
Eon
Turn on Energy
4.6
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 1.5
6.3
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
A
Tj = 25°C
1.25
1.6
VF
Diode Forward Voltage
IF = 200A
VGE = 0V
Tj = 125°C
1.2
V
ER
Reverse Recovery Energy
Tj = 125°C
4.1
mJ
Tj = 25°C
12
Qrr
Reverse Recovery Charge
IF = 200A
VR = 300V
di/dt
=4000A/s
Tj = 125°C
19
C
相关PDF资料 |
PDF描述 |
|---|---|
| APTGF200U60D4G | 250 A, 600 V, N-CHANNEL IGBT |
| APTGF20X60E2 | 32 A, 600 V, N-CHANNEL IGBT |
| APTGF20X60P2 | 32 A, 600 V, N-CHANNEL IGBT |
| APTGF20X60E2 | 32 A, 600 V, N-CHANNEL IGBT |
| APTGF20X60P2 | 32 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
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| APTGF20X60BTP2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF20X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF20X60E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF20X60E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF20X60P2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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