参数资料
型号: APTGF200U60D4G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 250 A, 600 V, N-CHANNEL IGBT
封装: MODULE-4
文件页数: 1/5页
文件大小: 263K
代理商: APTGF200U60D4G
APTGF200U60D4
A
P
T
G
F
200
U
60D
4–
R
ev
1
J
une
,2005
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC= 25°C
250
IC
Continuous Collector Current
TC= 80°C
200
ICM
Pulsed Collector Current
TC= 25°C
400
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
735
W
RBSOA
Reverse Bias Safe Operation Area
Tj = 125°C
400A@420V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
3
5
2
1
5
3
4
1
2
VCES = 600V
IC = 200A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
-
M6 connectors for power
-
M4 connectors for signal
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Single switch
NPT IGBT Power Module
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