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参数资料
| 型号： | APTGF200U60D4G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 250 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-4 |
| 文件页数： | 4/5页 |
| 文件大小： | 263K |
| 代理商： | APTGF200U60D4G |
APTGF200U60D4
A
P
T
G
F
200
U
60D
4–
R
ev
1
J
une
,2005
APT website – http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
350
400
0
0.511.522.533.5
VCE (V)
I C
(A
)
Output Characteristics
VGE=15V
VGE=12V
VGE=20V
VGE=9V
0
50
100
150
200
250
300
350
400
0
12345
VCE (V)
I C
(A
)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
350
400
5
678
9
10
11
12
VGE (V)
I C
(A
)
Energy losses vs Collector Current
Eon
Eoff
Er
0
2.5
5
7.5
10
12.5
15
0
50 100 150 200 250 300 350 400
IC (A)
E
(
m
J
)
VCE = 300V
VGE = 15V
RG = 1.5
TJ = 125°C
Eon
Eoff
Er
0
4
8
12
16
02
468
10
12
Gate Resistance (ohms)
E
(
m
J
)
VCE = 300V
VGE =15V
IC = 200A
TJ = 125°C
Switching Energy Losses vs Gate Resistance
Reverse Safe Operating Area
0
100
200
300
400
500
0
100
200
300
400
500
600
VCE (V)
I C
(A
)
VGE=15V
TJ=125°C
RG=1.5
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
rm
a
lI
m
pe
da
n
c
e
(
°C
/W
)
IGBT
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