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参数资料
| 型号： | APTGF30H60T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 42 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 314K |
| 代理商： | APTGF30H60T1G |
APTGF30H60T1G
APTG
F30H60T1G
–
Re
v0
Augus
t,2007
www.microsemi.com
5 – 6
VGE = 15V
10
20
30
40
50
0
10
2030
4050
60
70
ICE, Collector to Emitter Current (A)
td(
on)
,Turn-
On
D
elay
Tim
e(
n
s)
Turn-On Delay Time vs Collector Current
Tj = 125°C
VCE = 400V
RG = 6.8
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
25
50
75
100
125
0
10
20
30
40
50
60
70
ICE, Collector to Emitter Current (A)
td(
o
ff
),
Turn-Of
f
De
la
yTim
e
(ns
)
Turn-Off Delay Time vs Collector Current
VCE = 400V
RG = 6.8
VGE=15V,
TJ=125°C
0
10
20
30
40
50
0
102030
40506070
ICE, Collector to Emitter Current (A)
tr
,R
is
eTim
e(
n
s)
Current Rise Time vs Collector Current
VCE = 400V
RG = 6.8
TJ = 25°C
TJ = 125°C
0
10
20
30
40
50
0
102030
40506070
ICE, Collector to Emitter Current (A)
tf
,
Fa
ll
Ti
me
(ns
)
Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 6.8
TJ=125°C,
VGE=15V
0
0.25
0.5
0.75
1
0
10
2030
405060
70
ICE, Collector to Emitter Current (A)
E
on
,
Turn-
On
E
n
er
gy
Loss
(mJ)
Turn-On Energy Loss vs Collector Current
VCE = 400V
RG = 6.8
TJ = 125°C
0
0.5
1
1.5
2
0
10
20304050
6070
ICE, Collector to Emitter Current (A)
E
off
,Turn-of
fE
n
er
gy
Loss
(m
J)
Turn-Off Energy Loss vs Collector Current
VCE = 400V
VGE = 15V
RG = 6.8
Eon, 30A
Eoff, 30A
0
0.25
0.5
0.75
1
0
5
10
15
20
25
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
Switc
h
ing
E
n
er
gy
Los
se
s(mJ
)
VCE = 400V
VGE = 15V
TJ= 125°C
0
10
20
30
40
50
60
70
0
100
200
300
400
500
600
I C
,Col
lect
o
r
Current
(A
)
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF30H60T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge NPT IGBT Power Module |
| APTGF30H60T3G | 功能描述:POWER MOD IGBT NPT FULL BRDG SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF30TL601G | 功能描述:POWER MODULE IGBT 600V 30A SP1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF30TL60T3G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Three level inverter NPT IGBT Power Module |
| APTGF30X60BTP2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
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