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参数资料
| 型号： | APTGF30H60T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 42 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, MODULE-25 |
| 文件页数： | 2/6页 |
| 文件大小： | 292K |
| 代理商： | APTGF30H60T3G |
APTGF30H60T3G
A
P
T
G
F
30
H
60T
3G
–
R
ev
1
J
ul
y,
2006
www.microsemi.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
500
A
Tj = 25°C
1.7
2.0
2.45
VCE(on)
Collector Emitter on Voltage
VGE =15V
IC = 30A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 1mA
4
6
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
1350
Coes
Output Capacitance
193
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
120
pF
Qg
Total gate Charge
99
Qge
Gate – Emitter Charge
10
Qgc
Gate – Collector Charge
VGE = 15V
VBus = 300V
IC =30A
60
nC
Td(on)
Turn-on Delay Time
30
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
80
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 30A
RG = 6.8
15
ns
Td(on)
Turn-on Delay Time
32
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
90
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 30A
RG = 6.8
21
ns
Eon
Turn-on Switching Energy
Tj = 125°C
0.3
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 400V
IC = 30A
RG = 6.8
Tj = 125°C
0.8
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
150
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
15
A
IF = 15A
1.6
1.8
IF = 30A
1.9
VF
Diode Forward Voltage
IF = 15A
Tj = 125°C
1.4
V
Tj = 25°C
40
trr
Reverse Recovery Time
Tj = 125°C
150
ns
Tj = 25°C
95
Qrr
Reverse Recovery Charge
IF = 15A
VR = 400V
di/dt =200A/s
Tj = 125°C
520
nC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF30TL601G | 功能描述:POWER MODULE IGBT 600V 30A SP1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF30TL60T3G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Three level inverter NPT IGBT Power Module |
| APTGF30X60BTP2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF30X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF30X60E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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