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参数资料
| 型号： | APTGF50A120T |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Phase leg NPT IGBT Power Module |
| 中文描述： | 腿不扩散核武器条约相IGBT功率模块 |
| 文件页数： | 2/6页 |
| 文件大小： | 303K |
| 代理商： | APTGF50A120T |
APTGF50A120T
A
APT website – http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
Test Conditions
V
GE
= 0V, I
C
= 500 μA
V
GE
= 0V
V
CE
= 1200V
V
GE
=15V
I
C
= 50A
V
GE
= V
CE
, I
C
= 1 mA
V
GE
= ±20 V, V
CE
= 0V
Min
1200
4.5
Typ
3.2
4.0
Max
500
2500
3.7
6.5
100
Unit
V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
μA
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Q
g
Total gate Charge
Q
ge
Gate – Emitter Charge
Q
gc
Gate – Collector Charge
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
E
off
Turn-off Switching Energy
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
E
off
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
I
F(AV)
Maximum Average Forward Current
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Min
Typ
3450
330
220
330
35
200
35
65
320
30
5.4
2.3
35
65
360
40
6.9
3.05
Max
Unit
pF
V
GS
= 15V
V
Bus
= 600V
I
C
= 50A
nC
ns
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 50A
R
G
= 5
mJ
ns
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 50A
R
G
= 5
mJ
Test Conditions
50% duty cycle
I
F
= 60A
I
F
= 120A
I
F
= 60A
I
F
= 60A
V
R
= 800V
di/dt =400A/μs
I
F
= 60A
V
R
= 800V
di/dt =400A/μs
Min
Typ
60
2.0
2.3
1.8
370
Max
2.5
Unit
A
Tc = 70°C
V
F
Diode Forward Voltage
T
j
= 125°C
V
T
j
= 25°C
t
rr
Reverse Recovery Time
T
j
= 125°C
500
ns
T
j
= 25°C
1320
Q
rr
Reverse Recovery Charge
T
j
= 125°C
6900
nC
E
on
includes diode reverse recovery
In accordance with JEDEC standard JESD24-1
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| APTGF50A120T1G | 功能描述:IGBT MODULE NPT PHASE LEG SP1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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