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参数资料
| 型号： | APTGF50DSK120T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 70 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 242K |
| 代理商： | APTGF50DSK120T3G |
APTGF50DSK120T3G
APT
G
F50DSK120T
3G
–
Rev
0
Ap
ril,
2009
www.microsemi.com
5- 7
VGE = 15V
25
30
35
40
45
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
td
(on)
,Tu
rn-
O
n
D
e
la
y
T
ime
(n
s)
Turn-On Delay Time vs Collector Current
VCE = 600V
RG = 5
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
200
250
300
350
400
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
td
(o
ff),
T
u
rn
-O
ff
Del
a
y
Ti
m
e
(n
s
)
VCE = 600V
RG = 5
VGE=15V
20
60
100
140
180
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
tr,
Ri
se
T
im
e
(n
s
)
Current Rise Time vs Collector Current
VCE = 600V
RG = 5
TJ = 25°C
TJ = 125°C
20
30
40
50
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
tf,
F
a
ll
T
im
e
(n
s)
Current Fall Time vs Collector Current
VCE = 600V, VGE = 15V, RG = 5
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
4
8
12
16
20
24
28
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
Eon,
Tu
rn-
O
n
Ene
rgy
Lo
ss
(
m
J
)
VCE = 600V
RG = 5
TJ = 25°C
TJ = 125°C
0
2
4
6
8
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
Eof
f,
Tur
n-
of
fEne
rgy
Lo
ss
(m
J
)
Turn-Off Energy Loss vs Collector Current
VCE = 600V
VGE = 15V
RG = 5
Eon, 50A
Eoff, 50A
Eon, 25A
Eoff, 25A
0
2
4
6
8
10
12
14
16
18
0
10
20
304050
Gate Resistance (Ohms)
Swi
tch
in
g
Ene
rgy
L
o
ss
es
(
m
J
)
Switching Energy Losses vs Gate Resistance
VCE = 600V
VGE = 15V
TJ= 125°C
Eon, 50A
Eoff, 50A
Eon, 25A
Eoff, 25A
0
2
4
6
8
25
50
75
100
125
TJ, Junction Temperature (°C)
Swi
tch
ing
Ene
rgy
Lo
ss
es
(
m
J
)
Switching Energy Losses vs Junction Temp.
VCE = 600V
VGE = 15V
RG = 5
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PDF描述 |
|---|---|
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| APTGF50H60T3 | 65 A, 600 V, N-CHANNEL IGBT |
| APTGF50TA120P | 75 A, 1200 V, N-CHANNEL IGBT |
| APTGF50TA120P | 75 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF50DSK60T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual Buck chopper NPT IGBT Power Module |
| APTGF50DSK60T3G | 功能描述:IGBT MODULE NPT BUCK CHOP SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF50DU120T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual common source NPT IGBT Power Module |
| APTGF50DU120TG | 功能描述:IGBT MODULE NPT DUAL SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF50H120CT3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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