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参数资料
| 型号： | APTGF50X120TE3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 78 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-35 |
| 文件页数： | 2/3页 |
| 文件大小： | 215K |
| 代理商： | APTGF50X120TE3 |
APTGF50X120TE3
A
PT
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F5
0X
12
0T
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3
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ly
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00
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APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 3mA
1200
V
Tj = 25°C
0.8
1
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
4
mA
Tj = 25°C
2.0
2.5
3.0
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 50A
Tj = 125°C
3.1
3.7
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 2 mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
3300
Coes
Output Capacitance
500
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
220
pF
Td(on)
Turn-on Delay Time
44
Tr
Rise Time
56
Td(off)
Turn-off Delay Time
380
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 22
70
ns
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
2.3
2.8
VF
Diode Forward Voltage
IF = 50A
VGE = 0V
Tj = 125°C
1.8
V
trr
Reverse Recovery Time
IF = 50A
VR = 600V
di/dt =800A/s
Tj = 125°C
200
ns
Tj = 25°C
2.8
Qrr
Reverse Recovery Charge
IF = 50A
VR = 600V
di/dt =800A/s Tj = 125°C
8
C
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max Unit
R25
Resistance @ 25°C
5
k
B 25/50
T25 = 298.16 K
3375
K
=
T
B
R
T
1
exp
25
50
/
25
T: Thermistor temperature
RT: Thermistor value at T
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF50X120TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X60BTP3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF50X60BTP3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X60E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X60E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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