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参数资料
| 型号： | APTGF50X60BTP3 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 35 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-35 |
| 文件页数： | 2/4页 |
| 文件大小： | 254K |
| 代理商： | APTGF50X60BTP3 |
APTGF50X60RTP3
APTGF50X60BTP3
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APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake (only for APTGF50X60BTP3) Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
35
IC
Continuous Collector Current
TC = 80°C
25
ICM
Pulsed Collector Current
TC = 25°C
70
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
155
W
IF
DC Forward Current
TC = 80°C
10
A
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
70
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
125
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
250
W
RBSOA Reverse Bias Save Operating Area
Tj = 125°C
225A @ 360V
IF
DC Forward Current
TC = 80°C
30
IFRM
Repetitive Peak Forward Current
tp = 1ms
80
A
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
IR
Reverse Current
VR = 1600V
Tj = 150°C
3
mA
VF
Forward Voltage
IF = 50A
Tj = 150°C
1.0
V
RthJC
Junction to Case
0.65
°C/W
IGBT Brake & Diode (only for APTGF50X60BTP3) Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
1
500
A
Tj = 25°C
2.0
2.5
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 20A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 0.5mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Cies
Input Capacitance
1100
Cres
Reverse Transfer Capacitance
VGE = 0V,VCE = 25V
f = 1MHz
70
pF
Tj = 25°C
1.25
1.7
VF
Forward Voltage
VGE = 0V
IF = 10A
Tj = 125°C
1.2
V
IGBT
0.8
RthJC
Junction to Case
Diode
2.3
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| APTGF50X60RTP3 | 35 A, 600 V, N-CHANNEL IGBT |
| APTGF50X60BTP3 | 35 A, 600 V, N-CHANNEL IGBT |
| APTGF50X60BTP3G | 35 A, 600 V, N-CHANNEL IGBT |
| APTGF50X60T3G | 65 A, 600 V, N-CHANNEL IGBT |
| APTGF660U60D4G | 825 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF50X60BTP3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X60E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X60E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X60P2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X60P2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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