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参数资料
| 型号： | APTGF50X60BTP3 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 35 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-35 |
| 文件页数： | 3/4页 |
| 文件大小： | 254K |
| 代理商： | APTGF50X60BTP3 |
APTGF50X60RTP3
APTGF50X60BTP3
A
PT
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F5
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60
B
T
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APT website – http://www.advancedpower.com
3 - 4
IGBT & Diode Inverter Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500A
600
V
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
1
500
A
Tj = 25°C
1.95
2.45
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 50A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1 mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Cies
Input Capacitance
2200
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
200
pF
Td(on)
Turn-on Delay Time
40
Tr
Rise Time
9
Td(off)
Turn-off Delay Time
120
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 2.7
12
ns
Td(on)
Turn-on Delay Time
42
Tr
Rise Time
10
Td(off)
Turn-off Delay Time
132
Tf
Fall Time
21
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 2.7
1.0
mJ
Tj = 25°C
1.25
1.6
VF
Forward Voltage
VGE = 0V
IF = 50A
Tj = 125°C
1.2
V
Tj = 25°C
3.4
Qrr
Reverse Recovery Charge
IF = 50A
VR = 300V
di/dt=800A/s
Tj = 125°C
5.6
C
IGBT
0.5
RthJC
Junction to Case
Diode
0.8
°C/W
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max Unit
R25
Resistance @ 25°C
5
k
B 25/50
T25 = 298.16 K
3375
K
=
T
B
R
T
1
exp
25
50
/
25
3. Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
3.3
N.m
Wt
Package Weight
300
g
T: Thermistor temperature
RT: Thermistor value at T
相关PDF资料 |
PDF描述 |
|---|---|
| APTGF50X60RTP3 | 35 A, 600 V, N-CHANNEL IGBT |
| APTGF50X60BTP3 | 35 A, 600 V, N-CHANNEL IGBT |
| APTGF50X60BTP3G | 35 A, 600 V, N-CHANNEL IGBT |
| APTGF50X60T3G | 65 A, 600 V, N-CHANNEL IGBT |
| APTGF660U60D4G | 825 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF50X60BTP3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X60E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X60E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X60P2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X60P2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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