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参数资料
| 型号： | APTGF75DA120T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 275K |
| 代理商： | APTGF75DA120T1G |
APTGF75DA120T1G
APTG
F75DA
120T1G
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007
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
500
A
Tj = 25°C
3.2
3.7
VCE(sat)
Collector Emitter saturation Voltage
VGE =15V
IC = 75A
Tj = 125°C
3.9
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 2.5 mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
±500
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
5.1
Coes
Output Capacitance
0.7
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
0.4
nF
Td(on)
Turn-on Delay Time
120
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
310
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 75A
RG = 7.5
20
ns
Td(on)
Turn-on Delay Time
130
Tr
Rise Time
60
Td(off)
Turn-off Delay Time
360
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 75A
RG = 7.5
30
ns
Eon
Turn-on Switching Energy
Tj = 125°C
9
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 600V
IC = 75A
RG = 7.5
Tj = 125°C
4
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 70°C
60
A
IF = 60A
2.5
3
IF = 120A
3
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.8
V
Tj = 25°C
265
trr
Reverse Recovery Time
Tj = 125°C
350
ns
Tj = 25°C
560
Qrr
Reverse Recovery Charge
IF = 100A
VR = 800V
di/dt =200A/s
Tj = 125°C
2890
nC
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相关代理商/技术参数 |
参数描述 |
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| APTGF75DA60D1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Boost Chopper NPT IGBT Power Module |
| APTGF75DA60D1G | 功能描述:IGBT 600V 100A 355W D1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF75DDA120T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual Boost Chopper NPT IGBT Power Module |
| APTGF75DDA120TG | 功能描述:IGBT MODULE NPT BOOST CHOP SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF75DH120T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Asymmetrical - Bridge NPT IGBT Power Module |
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