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参数资料
| 型号： | APTGF75DH120T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 200K |
| 代理商： | APTGF75DH120T3G |
LV5749V
No.A1376-4/6
Block Diagram
Pin Function
Pin No.
Pin name
Description
14
VIN
Power supply pin.
This pin is monitored by UVLO function. When the voltage of this pin becomes 7.5V or more by UVLO function, The IC starts
and the soft start function operates.
11
GND
Ground pin. Each reference voltage is based on the voltage of the ground pin.
10
VDD
Power supply pin for an external the lower MOS-FET gate drive.
7
CBOOT
Bootstrap capacity connection pin. This pin becomes a GATE drive power supply of an external NchMOSFET.
Connect a bypath capacitor between CBOOT and SW.
6
SW
Pin to connect with switching node. The source of NchMOSFET connects to this pin.
5
SYNC
External synchronous signal input pin.
9
LDRV
An external the lower MOSFET gate drive pin.
8
HDRV
An external the upper MOSFET gate drive pin.
1
FB
Error amplifier reverse input pin.
By operating the converter, the voltage of this pin becomes 0.67V.
The voltage in which the output voltage is divided by an external resistance is applied to this pin.
2
COMP
Error amplifier output pin.
Connect a phase compensation circuit between this pin and GND.
16
SS
Pin to connect a capacitor for soft start. A capacitor for soft start is charged by using the voltage of about 5
μA.
This pin ends the soft start period by using the voltage of about 1.1V and the frequency fold back function becomes
active.
15
ILIM
Reference current pin for current detection.
The sink current of about 18.5
μA flows to this pin when Low level (GND) is set to the MODE pin.
Also, the sink current of about 37
μA flows to this pin when High level (VIN) is set to the MODE pin.
When a resistance is connected between this pin and VIN outside and the voltage applied to the SW pin is lower than the
voltage of the terminal side of the resistance, the upper NchMOSFET is off by operating the current limiter comparator. This
operation is reset with respect to each PWM pulse.
3
EN
ON/OFF pin.
13
OCP
Pin to set the time of the timer (during double the over current detection point)
Connect a capacitor between this pin and GND. OCP charge current : 5
μA
4
RT
Pin to set the oscillation frequency. Connect a resistance between this pin and GND.
12
MODE
Pin to switch the over current detection point. Set by the low level (GND) of the ILIM pin.
Set by the high level (VIN) of the OCP pin.
When this MODE pin is set to the high level and the point of the over current detection is set by using the ILIM pin is exceeded,
the value becomes double the original value.
Also, when the MODE pin is set to the low level, the point of the over current detection remains an original value.
14
VIN
VCC
12
MODE
15
ILIM
16
SS
1
FB
COMP
11 GND
9 LDRV
10 VDD
+
-
+
-
+
-
+
-
0.67V
SD
+
-
13
OCP
1.25V
OCP Comp1
OCP Comp2
Current
Amp
Err
Amp
RT SYNC
DMAX = 90%
PWM Comp
shut down(SD)
1.0V
0.5V
5V
MODE L 18.5
μA
MODE H 37
μA
5
μA
5
μA
5V
REGULATOR
REFERENCE
VOLTAGE
SAW WAVE
OSCILLATOR
OSP
LOGIC
S
R
Q
CONTROL
Logic
UVLO
5
4
EN
3
6SW
8 HDRV
7 CBOOT
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF75DH120TG | 功能描述:IGBT MODULE NPT ASYM BRIDGE SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF75DSK120T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual Buck chopper NPT IGBT Power Module |
| APTGF75DSK120TG | 功能描述:IGBT MODULE NPT BUCK CHOP SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF75H120T3AG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF75H120TG | 功能描述:POWER MODULE IGBT 1200V 75A SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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