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参数资料
| 型号： | APTGF75DH120T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 200K |
| 代理商： | APTGF75DH120T3G |
LV5749V
No.A1376-5/6
Timing Chart
When the MODE pin is set to the high level and the point of the over current detection is set by using the ILIM pin is
exceeded, the value becomes double the original value.
Also, when the MODE pin is set to the low level, the point of over current detection remains an original value.
Timing chart of the over current detection point switching is as below.
Setting Chart
1. Output voltage setting
Setting of the output voltage VOUT is as follows.
VOUT = 1 +
R4
R3 ×
VREF = 1 +
R4
R3 ×
0.67(typ) [V]
2. Soft Start setting
Setting of capacitor C5 is as follows.
C5 =
Iss
× Tss
VREF
=
5
μ × Tss
0.67
[F]
Iss : Charge current value.
Tss : Soft Start time
3. OCP Timer setting
Setting of OCP timer capacitor C11 is as follows.
C11 =
Iocp
× Tocp
Vocp comp1
=
5
μ × Tocp
1.3
[F]
Iocp : Charge current value.
Tocp : OCP time
4. Current limiter setting
Setting of the current limiter set resistance R5 is as follows.
R5 =
Rdson
×Iout
Iilim
=
Rdson
× IL max
18.5
μ
[
Ω]
Iilim : ILIM current value.
IL : inductance current value
Rdson : ON resistance value between Q1 drain-souces.
t
1.25V
current limit
× 2A
For example 6A
current limit
× 1A
For example 3A
over current detection point during High MODE
over current detection point during Low MODE
Load Current
0V
OCP
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF75DH120TG | 功能描述:IGBT MODULE NPT ASYM BRIDGE SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF75DSK120T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual Buck chopper NPT IGBT Power Module |
| APTGF75DSK120TG | 功能描述:IGBT MODULE NPT BUCK CHOP SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF75H120T3AG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF75H120TG | 功能描述:POWER MODULE IGBT 1200V 75A SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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