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参数资料
| 型号： | APTGF90A60T |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Phase leg NPT IGBT Power Module |
| 中文描述： | 腿不扩散核武器条约相IGBT功率模块 |
| 文件页数： | 1/6页 |
| 文件大小： | 306K |
| 代理商： | APTGF90A60T |
APTGF90A60T
A
APT website – http://www.advancedpower.com
1 - 6
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) THUNDERBOLT IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive TC of VCEsat
Low profile
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
VBUS
Q1
G1
E1
OUT
NTC2
0/VBUS
G2
E2
NTC1
Q2
OUT
OUT
NTC2
NTC1
VBUS
E1
G1
G2
E2
0/VBUS
G2
E2
Parameter
Max ratings
600
110
90
315
±20
416
315A @ 600V
Unit
V
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
T
c
= 25°C
T
j
= 150°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA Reverse Bias Safe Operating Area
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
A
V
W
V
CES
= 600V
I
C
= 90A @ Tc = 80°C
Phase leg
NPT IGBT Power Module
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF90A60T1G | 功能描述:POWER MOD IGBT NPT PHASE LEG SP1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF90A60T3AG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Phase leg NPT IGBT Power Module Power Module |
| APTGF90A60TG | 功能描述:IGBT MODULE NPT PHASE LEG SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF90DA60CT1G | 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTGF90DA60D1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Boost Chopper NPT IGBT Power Module |
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