参数资料
型号: APTGF90TA60P
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 110 A, 600 V, N-CHANNEL IGBT
封装: MODULE-21
文件页数: 3/6页
文件大小: 321K
代理商: APTGF90TA60P
APTGF90TA60P
A
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2004
APT website – http://www.advancedpower.com
3 - 6
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
60
A
IF = 60A
1.6
1.8
IF = 120A
1.9
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.4
V
Tj = 25°C
130
trr
Reverse Recovery Time
Tj = 125°C
170
ns
Tj = 25°C
220
Qrr
Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt =200A/s
Tj = 125°C
920
nC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
IGBT
0.3
RthJC
Junction to Case
Diode
0.9
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To heatsink
M6
3
5
N.m
Wt
Package Weight
250
g
Package outline
5 places (3:1)
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