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参数资料
| 型号： | APTGF90TA60P |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 110 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-21 |
| 文件页数： | 6/6页 |
| 文件大小： | 321K |
| 代理商： | APTGF90TA60P |
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M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF90TA60PG | 功能描述:IGBT MODULE NPT TRPL PHASE SP6P RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF90TDU60P | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Triple dual Common Source NPT IGBT Power Module |
| APTGF90TDU60PG | 功能描述:IGBT MODULE NPT TRPLE DUAL SP6P RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF90VDA60T3G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Dual Boost chopper NPT IGBT Power Module |
| APTGF90X60E3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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