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参数资料
| 型号： | APTGF90X60TE3 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 130 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-35 |
| 文件页数： | 2/3页 |
| 文件大小： | 220K |
| 代理商： | APTGF90X60TE3 |
APTGF90X60TE3
A
PT
G
F9
0X
60
T
E3
–
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500A
600
V
Tj = 25°C
1
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
1
mA
Tj = 25°C
1.7
2.0
2.45
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 100A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1.5mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
4300
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
400
pF
Td(on)
Turn-on Delay Time
25
Tr
Rise Time
10
Td(off)
Turn-off Delay Time
130
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 2.2
20
ns
Td(on)
Turn-on Delay Time
25
Tr
Rise Time
11
Td(off)
Turn-off Delay Time
150
Tf
Fall Time
30
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 2.2
2.9
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
1.25
1.6
VF
Diode Forward Voltage
IF = 100A
VGE = 0V
Tj = 125°C
1.2
V
Er
Reverse Recovery Energy
IF = 100A
VR = 300V
di/dt =800A/s
Tj = 125°C
3.2
mJ
Tj = 25°C
7
Qrr
Reverse Recovery Charge
IF = 100A
VR = 300V
di/dt =800A/s Tj = 125°C
12
C
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max Unit
R25
Resistance @ 25°C
5
k
B 25/50
T25 = 298.16 K
3375
K
=
T
B
R
T
1
exp
25
50
/
25
T: Thermistor temperature
RT: Thermistor value at T
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PDF描述 |
|---|---|
| APTGF90X60TE3 | 130 A, 600 V, N-CHANNEL IGBT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF90X60TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGFQ25H120T2G | 功能描述:IGBT 1200V 40A 227W MODULE RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGL100TL170G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk |
| APTGL120DA120T1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Boost chopper Trench + Field Stop IGBT4 Power module |
| APTGL120SK120T1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Buck chopper Trench + Field Stop IGBT4 Power module |
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