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参数资料
| 型号： | APTGF90X60TE3 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 130 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-35 |
| 文件页数： | 3/3页 |
| 文件大小： | 220K |
| 代理商： | APTGF90X60TE3 |
APTGF90X60TE3
A
PT
G
F9
0X
60
T
E3
–
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
3 - 3
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.29
RthJC
Junction to Case
Diode
0.55
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To heatsink
M5
3
4.5
N.m
Wt
Package Weight
300
g
Package outline
PIN 1
PIN 21
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
相关PDF资料 |
PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF90X60TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGFQ25H120T2G | 功能描述:IGBT 1200V 40A 227W MODULE RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGL100TL170G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk |
| APTGL120DA120T1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Boost chopper Trench + Field Stop IGBT4 Power module |
| APTGL120SK120T1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Buck chopper Trench + Field Stop IGBT4 Power module |
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