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参数资料
| 型号： | APTGS10X120BTP2 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| 中文描述： | 输入整流桥桥制动三相IGBT功率模块不扩散核武器条约 |
| 文件页数： | 2/4页 |
| 文件大小： | 189K |
| 代理商： | APTGS10X120BTP2 |
APTGS10X120RTP2
APTGS10X120BTP2
A
APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake
(only for APTGS10X120BTP2)
Absolute maximum ratings
Symbol
Parameter
V
CES
Collector - Emitter Breakdown Voltage
Max ratings
1200
20
10
20
±20
100
10
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
C
= 80°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
I
F
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
DC Forward Current
A
V
W
A
IGBT & Diode Inverter
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
1200
20
10
25
±20
100
45A @ 720V
10
20
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
T
C
= 80°C
T
C
= 80°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
SCSOA
I
F
I
FSM
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Short circuit Safe Operating Area
DC Forward Current
Surge Forward Current
A
V
W
t
p
= 1ms
A
2.
Electrical Characteristics
Diodes Rectifier
Electrical Characteristics
Symbol Characteristic
I
R
Reverse Current
Test Conditions
V
R
= 1600V
I
F
= 30A
I
F
= 10A
Min
Typ
2
1.3
0.9
Max
1.5
0.95
1
Unit
mA
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
V
F
Forward Voltage
V
R
thJC
Junction to Case
°C/W
IGBT Brake & Diode
(only for APTGS10X120BTP2)
Electrical Characteristics
Symbol Characteristic
Test Conditions
V
GE
= 0V
V
CE
= 1200V
Min
4.5
Typ
0.5
0.8
2.4
2.75
5.5
Max
500
2.85
6.5
300
Unit
μA
mA
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
V
CE(on)
Collector Emitter on Voltage
V
GE
= 15V
I
C
= 10A
V
GE
= V
CE
, I
C
= 0.35mA
V
GE
= 20V, V
CE
= 0V
V
GE
= 0V, V
CE
= 25V
f = 1MHz
V
GE
= 0V
I
F
= 10A
V
V
GE(th)
I
GES
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
C
ies
Input Capacitance
600
pF
T
j
= 25°C
T
j
= 125°C
IGBT
Diode
2.2
2.1
2.55
1.2
2.3
V
F
Forward Voltage
V
R
thJC
Junction to Case
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| APTGS10X120RTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGS15X120BTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGS15X120RTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGS25X120BTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGS25X120RTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGS10X120BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS10X120RTP2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGS10X120RTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS15X120BTP2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGS15X120BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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