参数资料
型号: APTGS10X120BTP2
元件分类: IGBT 晶体管
英文描述: 20 A, 1200 V, N-CHANNEL IGBT
封装: MODULE-24
文件页数: 3/4页
文件大小: 241K
代理商: APTGS10X120BTP2
APTGS10X120RTP2
APTGS10X120BTP2
A
PT
G
S1
0X
12
0B
T
P2
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
3 - 4
IGBT & Diode Inverter Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500A
1200
V
Tj = 25°C
0.5
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
0.8
mA
Tj = 25°C
2.4
2.85
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 10A
Tj = 125°C
2.75
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 0.35 mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
300
nA
Cies
Input Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
600
pF
Td(on)
Turn-on Delay Time
40
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
255
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 10A
RG = 82
40
ns
Td(on)
Turn-on Delay Time
45
Tr
Rise Time
40
Td(off)
Turn-off Delay Time
285
Tf
Fall Time
60
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 10A
RG = 82
1.1
mJ
Tj = 25°C
2.2
2.55
VF
Forward Voltage
VGE = 0V
IF = 10A
Tj = 125°C
2.1
V
Tj = 25°C
0.84
Qrr
Reverse Recovery Charge
IF = 10A
VR = 600V
di/dt=400A/s
Tj = 125°C
1.5
C
IGBT
1.2
RthJC
Junction to Case
Diode
2.3
°C/W
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max Unit
R25
Resistance @ 25°C
5
k
B 25/50
T25 = 298.16 K
3375
K
=
T
B
R
T
1
exp
25
50
/
25
3. Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
3.3
N.m
Wt
Package Weight
185
g
T: Thermistor temperature
RT: Thermistor value at T
相关PDF资料
PDF描述
APTGS15X120BTP2 20 A, 1200 V, N-CHANNEL IGBT
APTGS15X120RTP2 20 A, 1200 V, N-CHANNEL IGBT
APTGS15X120RTP2 20 A, 1200 V, N-CHANNEL IGBT
APTGS15X120BTP2G 20 A, 1200 V, N-CHANNEL IGBT
APTGS15X120BTP2 20 A, 1200 V, N-CHANNEL IGBT
相关代理商/技术参数
参数描述
APTGS10X120BTPG 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGS10X120RTP2 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module
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APTGS15X120BTP2 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module
APTGS15X120BTPG 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR