参数资料
型号: APTGS50X170E2
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 100 A, 1700 V, N-CHANNEL IGBT
封装: MODULE-17
文件页数: 1/3页
文件大小: 181K
代理商: APTGS50X170E2
APTGS50X170E2
A
PT
G
S5
0X
17
0E
2–
R
ev
0
N
ov
em
be
r,
20
03
APT website – http://www.advancedpower.com
1 - 3
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pin out: APTGS50X170E2 (Long pins)
V
W
P+
11 12
9 10
7 8
U
N-
1 2 3 4 5 6
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1700
V
TC = 25°C
100
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
150
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
350
W
RBSOA Reverse Bias Safe Operation Area
Tj = 125°C
100A@1600V
VCES = 1700V
IC = 50A @ Tc = 80°C
Application
AC Motor control
Features
Non Punch Through (NPT) Low Loss IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
3 Phase bridge
NPT IGBT Power Module
相关PDF资料
PDF描述
APTGS50X170E2 100 A, 1700 V, N-CHANNEL IGBT
APTGS50X170E2G 100 A, 1700 V, N-CHANNEL IGBT
APTGS50X170E3G 100 A, 1700 V, N-CHANNEL IGBT
APTGS50X170E3 100 A, 1700 V, N-CHANNEL IGBT
APTGS50X170E3 100 A, 1700 V, N-CHANNEL IGBT
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