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参数资料
| 型号： | APTGS50X170E2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 1700 V, N-CHANNEL IGBT |
| 封装： | MODULE-17 |
| 文件页数： | 2/3页 |
| 文件大小： | 181K |
| 代理商： | APTGS50X170E2 |
APTGS50X170E2
A
PT
G
S5
0X
17
0E
2–
R
ev
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N
ov
em
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20
03
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 1mA
1700
V
Tj = 25°C
0.02
0.1
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1700V
Tj = 125°C
1
mA
Tj = 25°C
2.7
3.3
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 50A
Tj = 125°C
3.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 2.2 mA
3
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
3500
pF
Td(on)
Turn-on Delay Time
100
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
800
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 50A
RG = 30
30
ns
Td(on)
Turn-on Delay Time
100
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
900
Tf
Fall Time
30
ns
Eoff
Turn Off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 50A
RG = 30
30
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
2.2
2.6
VF
Diode Forward Voltage
IF = 50A
VGE = 0V
Tj = 125°C
2.0
V
Tj = 25°C
2
Er
Reverse Recovery Energy
IF = 50A
VR = 900V
di/dt =750A/s Tj = 125°C
4
mJ
Tj = 25°C
6
Qrr
Reverse Recovery Charge
IF = 50A
VR = 900V
di/dt =750A/s Tj = 125°C
12
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.37
RthJC
Junction to Case
Diode
0.63
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
3400
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
2
3.5
N.m
Wt
Package Weight
185
g
相关PDF资料 |
PDF描述 |
|---|---|
| APTGS50X170E2 | 100 A, 1700 V, N-CHANNEL IGBT |
| APTGS50X170E2G | 100 A, 1700 V, N-CHANNEL IGBT |
| APTGS50X170E3G | 100 A, 1700 V, N-CHANNEL IGBT |
| APTGS50X170E3 | 100 A, 1700 V, N-CHANNEL IGBT |
| APTGS50X170E3 | 100 A, 1700 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGS50X170E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS50X170E3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGS50X170E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGS50X170TE3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGS50X170TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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