参数资料
型号: APTGT100A120D1G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 150 A, 1200 V, N-CHANNEL IGBT
封装: ROHS COMPLIANT, D1, 7 PIN
文件页数: 1/2页
文件大小: 180K
代理商: APTGT100A120D1G
APTGT100A120D1G
APT
G
T
100A120D
1G
Rev
1
Decem
ber
,2009
www.microsemi.com
1- 4
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
150
IC
Continuous Collector Current
TC = 80°C
100
ICM
Pulsed Collector Current
TC = 25°C
200
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
520
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
200A@1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
2
1
3
5
Q2
7
6
Q1
4
VCES = 1200V
IC = 100A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
High level of integration
M5 power connectors
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Phase Leg
Trench + Field Stop IGBT
Power Module
相关PDF资料
PDF描述
APTGT100A120D1 150 A, 1200 V, N-CHANNEL IGBT
APTGT100A120D1 150 A, 1200 V, N-CHANNEL IGBT
APTGT100A120T 140 A, 1200 V, N-CHANNEL IGBT
APTGT100A120T 140 A, 1200 V, N-CHANNEL IGBT
APTGT100A60T1G 150 A, 600 V, N-CHANNEL IGBT
相关代理商/技术参数
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