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参数资料
| 型号： | APTGT100H170 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 1700 V, N-CHANNEL IGBT |
| 封装： | MODULE-12 |
| 文件页数： | 1/5页 |
| 文件大小： | 274K |
| 代理商： | APTGT100H170 |
APTGT100H170
A
P
T
G
T
100
H
170
–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1700
V
TC= 25°C
150
IC
Continuous Collector Current
TC= 80°C
100
ICM
Pulsed Collector Current
TC= 25°C
200
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
560
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 125°C
200A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G4
0/VBUS
E3
Q3
G3
OUT2
VBUS
E1
Q1
G1
E4
Q4
OUT1
E2
Q2
G2
E2
G2
G4
E4
E3
G1
E1
0/VBUS
VBUS
OUT2
OUT1
G3
VCES = 1700V
IC = 100A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Full - Bridge
Trench + Field Stop IGBT
Power Module
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PDF描述 |
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| APTGT100H60T | 150 A, 600 V, N-CHANNEL IGBT |
| APTGT100H60T | 150 A, 600 V, N-CHANNEL IGBT |
| APTGT100SK120T | 140 A, 1200 V, N-CHANNEL IGBT |
| APTGT100SK120T | 140 A, 1200 V, N-CHANNEL IGBT |
| APTGT100SK60T | 150 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT100H170G | 功能描述:IGBT MOD TRENCH FULL BRIDGE SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT100H60T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge Trench + Field Stop IGBT Power Module |
| APTGT100H60T3 | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT100H60T3G | 功能描述:IGBT FULL BRIDGE 600V 150A SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT100H60TG | 功能描述:IGBT MOD TRENCH FULL BRIDGE SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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