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参数资料
| 型号： | APTGT100X120E3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 140 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-33 |
| 文件页数： | 2/3页 |
| 文件大小： | 225K |
| 代理商： | APTGT100X120E3 |
APTGT100X120E3
A
PT
G
T
10
0X
12
0E
3
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ly
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00
3
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 5mA
1200
V
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
5
mA
Tj = 25°C
1.4
1.7
2.1
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 100A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 4 mA
5.0
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
7200
Coes
Output Capacitance
400
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
300
pF
Td(on)
Turn-on Delay Time
260
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
420
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 100A
RG = 3.9
70
ns
Td(on)
Turn-on Delay Time
290
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
520
Tf
Fall Time
90
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 100A
RG = 3.9
12
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
1.6
2.1
VF
Diode Forward Voltage
IF = 100A
VGE = 0V
Tj = 125°C
1.6
V
Tj = 25°C
5
Er
Reverse Recovery Energy
IF = 100A
VR = 600V
di/dt =900A/s Tj = 125°C
9
mJ
Tj = 25°C
10
Qrr
Reverse Recovery Charge
IF = 100A
VR = 600V
di/dt =900A/s Tj = 125°C
19
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.26
RthJC
Junction to Case
Diode
0.48
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
3
4.5
N.m
Wt
Package Weight
300
g
相关PDF资料 |
PDF描述 |
|---|---|
| APTGT100X120E3 | 140 A, 1200 V, N-CHANNEL IGBT |
| APTGT100X120TE3 | 140 A, 1200 V, N-CHANNEL IGBT |
| APTGT100X120TE3 | 140 A, 1200 V, N-CHANNEL IGBT |
| APTGT150A120D1 | 220 A, 1200 V, N-CHANNEL IGBT |
| APTGT150A120D1 | 220 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT100X120E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT100X120TE3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge Trench IGBT Power Module |
| APTGT100X120TEG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT150A120 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg Fast Trench + Field Stop IGBT Power Module |
| APTGT150A1202G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 220A SP2 |
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