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参数资料
| 型号： | APTGT150DA120TG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 220 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP4, 12 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 256K |
| 代理商： | APTGT150DA120TG |
APTGT150DA120TG
A
P
T
G
T
150
D
A
120
T
G
–
R
ev
1
J
ul
y,
2006
www.microsemi.com
2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
350
A
Tj = 25°C
1.7
2.1
VCE(sat)
Collector Emitter Saturation Voltage
VGE = 15V
IC = 150A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 3 mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
10.7
Coes
Output Capacitance
0.56
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
0.48
nF
Td(on)
Turn-on Delay Time
280
Tr
Rise Time
40
Td(off)
Turn-off Delay Time
420
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2
75
ns
Td(on)
Turn-on Delay Time
290
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
520
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2
90
ns
Eon
Turn-on Switching Energy
Tj = 125°C
14
Eoff
Turn-off Switching Energy
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2
Tj = 125°C
16
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
150
A
Tj = 25°C
1.6
2.1
VF
Diode Forward Voltage
IF = 150A
Tj = 125°C
1.6
V
Tj = 25°C
170
trr
Reverse Recovery Time
Tj = 125°C
280
ns
Tj = 25°C
15
Qrr
Reverse Recovery Charge
Tj = 125°C
29
C
Tj = 25°C
7
Er
Reverse Recovery Energy
IF = 150A
VR = 600V
di/dt =3000A/s
Tj = 125°C
12
mJ
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| APTGT150DA12DX | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT150DA170 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Boost chopper Trench + Field Stop IGBT Power Module |
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| APTGT150DA170D1G | 功能描述:IGBT 1700V 280A 780W D1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT150DA170D3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Boost chopper Trench IGBT Power Module |
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