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参数资料
| 型号： | APTGT150SK120D1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 220 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT PACKAGE-7 |
| 文件页数： | 4/4页 |
| 文件大小： | 179K |
| 代理商： | APTGT150SK120D1G |
APTGT150SK120D1G
APTG
T150SK120
D1G
–
Rev
2
D
ecem
ber,
2009
www.microsemi.com
4- 4
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
01
23
4
VCE (V)
I C
(A
)
Output Characteristics
VGE=15V
VGE=13V
VGE=17V
VGE=9V
0
50
100
150
200
250
300
01
23
4
VCE (V)
I C
(A)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
5678
9
10
11
12
VGE (V)
I C
(A)
Energy losses vs Collector Current
Eon
Eoff
Err
0
10
20
30
40
50
60
0
50
100
150
200
250
300
IC (A)
E
(
m
J
)
VCE = 600V
VGE = 15V
RG = 4.7
TJ = 125°C
Eon
Eoff
Err
0
10
20
30
40
50
4
8
12
16
20
24
28
32
Gate Resistance (ohms)
E
(
m
J
)
VCE = 600V
VGE =15V
IC = 150A
TJ = 125°C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
50
100
150
200
250
300
350
0
400
800
1200
1600
VCE (V)
I C
(A)
VGE=15V
TJ=125°C
RG=4.7
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.04
0.08
0.12
0.16
0.2
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
rma
lImpe
d
a
nc
e
(°
C
/W
)
IGBT
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT150SK120D3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Buck chopper Trench IGBT Power Module |
| APTGT150SK120DY | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT150SK120G | 功能描述:IGBT 1200V 220A 690W SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT150SK120T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Buck chopper Fast Trench + Field Stop IGBT Power Module |
| APTGT150SK120TG | 功能描述:IGBT 1200V 220A 690W SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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