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参数资料
| 型号： | APTGT150TL60G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 200 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP6, 12 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 220K |
| 代理商： | APTGT150TL60G |
APTGT150TL60G
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www.microsemi.com
3- 7
CR1 to CR4 diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
150
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
350
A
IF
DC Forward Current
Tc = 80°C
100
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 100A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
125
trr
Reverse Recovery Time
Tj = 150°C
220
ns
Tj = 25°C
4.7
Qrr
Reverse Recovery Charge
Tj = 150°C
9.9
C
Tj = 25°C
1.1
Err
Reverse Recovery Energy
IF = 100A
VR = 300V
di/dt =2000A/s
Tj = 150°C
2.4
mJ
RthJC
Junction to Case Thermal Resistance
0.77
°C/W
CR5 & CR6 diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
150
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
350
A
IF
DC Forward Current
Tc = 80°C
150
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 150A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
130
trr
Reverse Recovery Time
Tj = 150°C
225
ns
Tj = 25°C
6.9
Qrr
Reverse Recovery Charge
Tj = 150°C
14.5
C
Tj = 25°C
1.6
Err
Reverse Recovery Energy
IF = 150A
VR = 300V
di/dt =3000A/s
Tj = 150°C
3.5
mJ
RthJC
Junction to Case Thermal Resistance
0.52
°C/W
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
175
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
280
g
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相关代理商/技术参数 |
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|---|---|
| APTGT150X120E3G | 制造商:Microsemi Corporation 功能描述:3 PHASE BRIDGE TRENCH + FIELD STOP IGBT POWER MODULE 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT200A120 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg Fast Trench + Field Stop IGBT Power Module |
| APTGT200A120D3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg Trench IGBT Power Module |
| APTGT200A120D3G | 功能描述:IGBT MODULE TRENCH PHASE LEG D3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT200A120G | 功能描述:POWER MODULE IGBT 1200V 200A SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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