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参数资料
| 型号： | APTGT20H60T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 32 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 274K |
| 代理商： | APTGT20H60T1G |
APTGT20H60T1G
APTGT20H
60
T
1G
–
Re
v0
Augus
t,2007
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
A
Tj = 25°C
1.5
1.9
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 20A
Tj = 150°C
1.7
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 300A
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
300
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
1100
Coes
Output Capacitance
70
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
35
pF
Td(on)
Turn-on Delay Time
110
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
200
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 20A
RG = 12
40
ns
Td(on)
Turn-on Delay Time
120
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
250
Tf
Fall Time
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 20A
RG = 12
60
ns
Tj = 25°C
0.11
Eon
Turn-on Switching Energy
Tj = 150°C
0.2
mJ
Tj = 25°C
0.5
Eoff
Turn-off Switching Energy
VGE = ±15V
VBus = 300V
IC = 20A
RG = 12
Tj = 150°C
0.7
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
350
A
IF
DC Forward Current
Tc = 80°C
20
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 20A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
100
trr
Reverse Recovery Time
Tj = 150°C
150
ns
Tj = 25°C
1.1
Qrr
Reverse Recovery Charge
Tj = 150°C
2.3
C
Tj = 25°C
0.23
Er
Reverse Recovery Energy
IF = 20A
VR = 300V
di/dt =1600A/s
Tj = 150°C
0.50
mJ
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT20H60T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge Trench + Field Stop IGBT Power Module |
| APTGT20H60T3G | 功能描述:IGBT MOD TRENCH FULL BRIDGE SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT20TL601G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk |
| APTGT20TL60T3G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Three level inverter Trench + Field Stop IGBT Power Module |
| APTGT20X60T3G | 功能描述:IGBT MODULE TRENCH 3PH BRDG SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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