- 您现在的位置：买卖IC网 > PDF目录57950 > APTGT300A120D3G (MICROSEMI POWER PRODUCTS GROUP) 440 A, 1200 V, N-CHANNEL IGBT PDF资料下载
参数资料
| 型号： | APTGT300A120D3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 440 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-7 |
| 文件页数： | 2/5页 |
| 文件大小： | 212K |
| 代理商： | APTGT300A120D3G |
APTGT300A120D3G
APT
G
T
300A120D
3G
–
Rev
1
Septem
ber
,2008
www.microsemi.com
2- 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
500
A
Tj = 25°C
1.7
2.1
VCE(sat)
Collector Emitter saturation Voltage
VGE = 15V
IC = 300A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 12mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
21
Cres
Reverse Transfer Capacitance
VGE = 0V ; VCE = 25V
f = 1MHz
1
nF
QG
Gate charge
VGE=±15V, IC=300A
VCE=600V
2.8
C
Td(on)
Turn-on Delay Time
250
Tr
Rise Time
90
Td(off)
Turn-off Delay Time
550
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 300A
RG = 2.2Ω
130
ns
Td(on)
Turn-on Delay Time
300
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
650
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 300A
RG = 2.2Ω
180
ns
Eon
Turn on Energy
Tj = 125°C
25
Eoff
Turn off Energy
VGE = ±15V
VBus = 600V
IC = 300A
RG = 2.2Ω
Tj = 125°C
44
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 900V
tp ≤ 10s ; Tj = 125°C
1200
A
Reverse diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
750
IRRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
1000
A
IF
DC Forward Current
Tc = 80°C
300
A
Tj = 25°C
1.6
2.1
VF
Diode Forward Voltage
IF = 300A
VGE = 0V
Tj = 125°C
1.6
V
Tj = 25°C
170
trr
Reverse Recovery Time
Tj = 125°C
280
ns
Tj = 25°C
28
Qrr
Reverse Recovery Charge
Tj = 125°C
56
C
Tj = 25°C
12
Err
Reverse Recovery Energy
IF = 300A
VR = 600V
di/dt =3500A/s
Tj = 125°C
22
mJ
相关PDF资料 |
PDF描述 |
|---|---|
| APTGT300A170D3G | 530 A, 1700 V, N-CHANNEL IGBT |
| APTGT300A170D3 | 530 A, 1700 V, N-CHANNEL IGBT |
| APTGT300A170D3 | 530 A, 1700 V, N-CHANNEL IGBT |
| APTGT300A170 | 400 A, 1700 V, N-CHANNEL IGBT |
| APTGT300A170 | 400 A, 1700 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT300A120G | 功能描述:IGBT MODULE TRENCH PHASE LEG SP6 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT300A120G_09 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Phase leg Fast Trench + Field Stop IGBT Power Module |
| APTGT300A170 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg Trench + Field Stop IGBT Power Module |
| APTGT300A170D3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg Trench IGBT Power Module |
| APTGT300A170D3G | 功能描述:IGBT MODULE TRENCH PHASE LEG D3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
发布紧急采购，3分钟左右您将得到回复。