参数资料
型号: APTGT300U170D4G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 530 A, 1700 V, N-CHANNEL IGBT
封装: ROHS COMPLIANT, D4, 4 PIN
文件页数: 2/5页
文件大小: 200K
代理商: APTGT300U170D4G
APTGT300U170D4G
APT
G
T
300U170D
4G
Rev
0
Novem
ber
,2008
www.microsemi.com
2- 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
5
mA
Tj = 25°C
2.0
2.4
VCE(sat)
Collector Emitter saturation Voltage
VGE = 15V
IC = 300A
Tj = 125°C
2.4
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 13 mA
5.2
5.8
6.4
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
26
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
0.88
nF
QG
Gate charge
VGE=±15V, IC=300A
VCE=900V
3.8
C
Td(on)
Turn-on Delay Time
250
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
850
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 300A
RG = 4.5Ω
120
ns
Td(on)
Turn-on Delay Time
300
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
1000
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 300A
RG = 4.5Ω
200
ns
Eon
Turn On Energy
Tj = 125°C
108
Eoff
Turn Off Energy
VGE = ±15V
VBus = 900V
IC = 300A
RG = 4.5Ω
Tj = 125°C
100
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 1000V
tp ≤ 10s ; Tj = 125°C
1200
A
Reverse diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1700
V
Tj = 25°C
750
IRRM
Maximum Reverse Leakage Current
VR=1700V
Tj = 125°C
1000
A
IF
DC forward current
Tc=80°C
300
A
Tj = 25°C
1.8
2.2
VF
Diode Forward Voltage
IF = 300A
VGE = 0V
Tj = 125°C
1.9
V
Tj = 25°C
35
Err
Reverse Recovery Energy
Tj = 125°C
70
mJ
Tj = 25°C
420
trr
Reverse Recovery Time
Tj = 125°C
525
ns
Tj = 25°C
76
Qrr
Reverse Recovery Charge
IF = 300A
VR = 900V
di/dt =3500A/s
Tj = 125°C
124
C
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