参数资料
型号: APTGT35A120D1
厂商: Advanced Power Technology Ltd.
英文描述: Phase leg Trench IGBT Power Module
中文描述: 相脚沟道IGBT功率模块
文件页数: 2/3页
文件大小: 154K
代理商: APTGT35A120D1
APTGT35A120D1
A
APT website – http://www.advancedpower.com
2 - 3
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, I
C
= 1.5mA
V
GE
= 0V, V
CE
= 1200V
V
GE
= 15V
I
C
= 35A
V
GE
= V
CE
, I
C
= 1.5mA
V
GE
= 20V, V
CE
= 0V
Min
1200
5.0
Typ
1.7
2.0
5.8
Max
5
2.1
6.5
400
Unit
V
mA
T
j
= 25°C
T
j
= 125°C
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
Reverse diode ratings and characteristics
Symbol Characteristic
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V, V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 35A
R
G
= 27
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 35A
R
G
= 27
Min
Typ
2.5
0.1
150
90
550
130
180
100
650
180
Max
Unit
nF
ns
ns
Test Conditions
I
F
= 35A
V
GE
= 0V
I
F
= 35A
V
R
= 600V
di/dt =990A/μs
I
F
= 35A
V
= 600V
di/dt =990A/μs T
j
= 125°C
Min
Typ
1.6
1.6
Max
2.1
Unit
T
j
= 25°C
T
j
= 125°C
V
F
Diode Forward Voltage
V
E
rec
Reverse Recovery Energy
T
j
= 125°C
2.7
mJ
T
j
= 25°C
3.7
Q
rr
Reverse Recovery Charge
6.8
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
0.6
0.95
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
2500
V
T
J
T
STG
T
C
-40
-40
-40
2
3
150
125
125
3.5
5
180
°C
For terminals
To Heatsink
M5
M6
Torque Mounting torque
N.m
Wt
Package Weight
g
Package outline
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APTGT35A120D1G 功能描述:IGBT MOD TRENCH PHASE LEG D1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGT35A120T1G 功能描述:IGBT MOD TRENCH PHASE LEG SP1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGT35DA120D1G 功能描述:IGBT 1200V 55A 205W D1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGT35H120T1G 功能描述:IGBT MOD TRENCH FULL BRIDGE SP1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGT35H120T3 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge Trench IGBT Power Module