参数资料
型号: APTGT35X120RTP3
厂商: Advanced Power Technology Ltd.
英文描述: Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module
中文描述: 输入整流桥制动三相桥沟道IGBT功率模块
文件页数: 3/4页
文件大小: 216K
代理商: APTGT35X120RTP3
APTGT35X120RTP3
APTGT35X120BTP3
A
APT website – http://www.advancedpower.com
3 - 4
IGBT & Diode Inverter
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, I
C
= 3mA
V
GE
= 0V, V
CE
= 1200V
V
GE
=15V
I
C
= 50A
V
GE
= V
CE
, I
C
= 2 mA
V
GE
= 20V, V
CE
= 0V
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 40A
R
G
= 27
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 40A
R
G
= 27
Min
1200
5.0
Typ
1.8
2.1
5.8
2530
132
115
85
30
420
65
90
45
520
90
4.2
2.1
2.0
2
Max
4
2.2
6.5
600
Unit
V
mA
T
j
= 25°C
T
j
= 125°C
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
C
ies
C
oss
C
rss
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
off
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn off Energy
V
nA
pF
ns
ns
mJ
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
V
F
Forward Voltage
V
GE
= 0V
I
F
= 40A
I
F
= 25A
V
R
= 600V
di/dt=990A/μs
V
Q
rr
Reverse Recovery Charge
T
j
= 125°C
IGBT
Diode
5
μC
0.6
0.95
R
thJC
Junction to Case
°C/W
Temperature sensor NTC
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/50
T
25
= 298.16 K
Min
Typ
5
3375
Max
Unit
k
K
=
T
T
B
R
R
T
1
1
exp
25
50
/
25
25
3.
Thermal and package characteristics
Symbol Characteristic
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
T
J
Operating junction temperature range
T
STG
Storage Temperature Range
T
C
Operating Case Temperature
Torque Mounting torque
Wt
Package Weight
Min
Typ
Max
Unit
V
ISOL
2500
V
-40
-40
-40
150
125
125
3.3
300
°C
To Heatsink
M5
N.m
g
T: Thermistor temperature
R
T
: Thermistor value at T
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